PART |
Description |
Maker |
MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V. M/A-COM Technology Solutions, Inc.
|
SBLF10L25 SBL10L25 SBLB10L25 |
Low VF Schottky Barrier Rectifier Reverse Voltage 25V Forward Current 10A Low VF Schottky Barrier Rectifier VF肖特基整流器
|
VISAY[Vishay Siliconix] Vishay Intertechnology, Inc.
|
BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling Schottky Diodes - Low barrier silicon RF Schottky diode for detectors Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
CMS03 |
Schottky Barrier Rectifier Trench Schottky Barrier Type Switching Mode Power Supply Applications Portable Equipment Battery Applications TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
|
TOSHIBA[Toshiba Semiconductor]
|
BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 330MHz Buffered Video Switches Crosspoint Building Blocks Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps 500MHz, Low-Power Op Amps BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500 400MHz, Ultra-Low-Distortion Op Amps 250MHz, Broadcast-Quality, Low-Power Video Op Amps HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管(伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器) 350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
|
5082-2279 50822279 |
SCHOTTKY BARRIER DUAL DIODE SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
MADS-002502-1246HP MADS-002502-1246LP MADS-002502- |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes
|
M/A-COM Technology Solutions, Inc.
|
NTSA4100 |
Schottky Rectif
|
ON Semiconductor
|
MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|